FQU3P20TU
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET P-CH 200V 2.4A IPAK
$1.01
Available to order
Reference Price (USD)
1+
$1.01000
500+
$0.9999
1000+
$0.9898
1500+
$0.9797
2000+
$0.9696
2500+
$0.9595
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FQU3P20TU from Fairchild Semiconductor redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the FQU3P20TU offers the precision and reliability you need. Trust Fairchild Semiconductor to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.2A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-PAK
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
STMicroelectronics
STL100N6LF6
Vishay Siliconix
SQJA96EP-T1_GE3
Nexperia USA Inc.
PMT560ENEAX
Vishay Siliconix
SI1012R-T1-GE3
NXP USA Inc.
PMR290XN,115
Vishay Siliconix
SIE808DF-T1-E3
Panjit International Inc.
PJQ4465AP_R2_00001
Infineon Technologies
IRFR15N20DTRPBF
Nexperia USA Inc.
PXN017-30QLJ
IXYS