PMT560ENEAX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 100V 1.1A SOT223
$0.46
Available to order
Reference Price (USD)
1,000+
$0.15444
2,000+
$0.14157
5,000+
$0.13299
10,000+
$0.12441
25,000+
$0.11411
50,000+
$0.10982
Exquisite packaging
Discount
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Upgrade your designs with the PMT560ENEAX by Nexperia USA Inc., a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the PMT560ENEAX is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 715mOhm @ 1.1A, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 750mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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