FS03MR12A6MA1BBPSA1
Infineon Technologies
Infineon Technologies
HYBRID PACK DRIVE SIC AG-HYBRIDD
$3,516.48
Available to order
Reference Price (USD)
1+
$3516.48000
500+
$3481.3152
1000+
$3446.1504
1500+
$3410.9856
2000+
$3375.8208
2500+
$3340.656
Exquisite packaging
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Optimize your electronic projects with the FS03MR12A6MA1BBPSA1 from Infineon Technologies, a leading option in the Discrete Semiconductor Products market. As a Transistors - FETs, MOSFETs - Arrays device, it provides fast switching speeds and low conduction losses, essential for high-efficiency applications. Ideal for use in server power supplies, battery management systems, and RF amplifiers, the FS03MR12A6MA1BBPSA1 ensures top-notch performance. Infineon Technologies's expertise in semiconductor technology guarantees a product you can rely on.
Specifications
- Product Status: Active
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
- Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 240mA
- Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 42.5nF @ 600V
- Power - Max: 20mW
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-HYBRIDD-2
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