SIZF914DT-T1-GE3
Vishay Siliconix
Vishay Siliconix
DUAL N-CH 25-V (D-S) MOSFET W/SC
$0.86
Available to order
Reference Price (USD)
1+
$0.85767
500+
$0.8490933
1000+
$0.8405166
1500+
$0.8319399
2000+
$0.8233632
2500+
$0.8147865
Exquisite packaging
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The SIZF914DT-T1-GE3 from Vishay Siliconix is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the SIZF914DT-T1-GE3 provides reliable performance in demanding environments. Choose Vishay Siliconix for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 23.5A (Ta), 40A (Tc), 52A (Ta), 60A (Tc)
- Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 10V, 0.9mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V, 98nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 10V, 4670pF @ 10V
- Power - Max: 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-PowerPair® (6x5)
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