FS100R12KT4GBOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 100A 515W
$222.48
Available to order
Reference Price (USD)
10+
$141.95000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FS100R12KT4GBOSA1 by Infineon Technologies redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the FS100R12KT4GBOSA1 in high-efficiency servo controllers for manufacturing automation. Infineon Technologies combines innovation with quality in every FS100R12KT4GBOSA1 module.
Specifications
- Product Status: Not For New Designs
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 100 A
- Power - Max: 515 W
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
IXYS
IXYN140N120A4
Infineon Technologies
DDB6U134N16RRB11BPSA1
Infineon Technologies
FP25R12W1T7B11BPSA1
Infineon Technologies
FS20R06VE3B2BOMA1
Infineon Technologies
FS25R12W1T7BOMA1
Fairchild Semiconductor
FMG1G200US60L
Microchip Technology
APTGT100BB60T3G
Infineon Technologies
FF1400R12IP4PBOSA1
Infineon Technologies
FZ800R17KF4CNOSA1
Infineon Technologies