FS25R12W1T7BOMA1
Infineon Technologies
Infineon Technologies
LOW POWER EASY AG-EASY1B-1
$42.84
Available to order
Reference Price (USD)
1+
$42.84000
500+
$42.4116
1000+
$41.9832
1500+
$41.5548
2000+
$41.1264
2500+
$40.698
Exquisite packaging
Discount
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Infineon Technologies's FS25R12W1T7BOMA1 sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the FS25R12W1T7BOMA1 in your traction inverters or high-energy physics experiments for unparalleled performance. Trust Infineon Technologies to deliver cutting-edge IGBT solutions with the FS25R12W1T7BOMA1 power module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 25 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): 5.6 µA
- Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY1B
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