FS150R12N2T7BPSA1
Infineon Technologies
Infineon Technologies
LOW POWER ECONO AG-ECONO2-6
$214.82
Available to order
Reference Price (USD)
1+
$214.82000
500+
$212.6718
1000+
$210.5236
1500+
$208.3754
2000+
$206.2272
2500+
$204.079
Exquisite packaging
Discount
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Experience next-generation power control with Infineon Technologies's FS150R12N2T7BPSA1 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The FS150R12N2T7BPSA1 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the FS150R12N2T7BPSA1 in your next-generation HVDC systems or particle accelerator power supplies. Infineon Technologies delivers reliability where it matters most with the FS150R12N2T7BPSA1 IGBT module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Level Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 150 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A
- Current - Collector Cutoff (Max): 1.2 µA
- Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONO2
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