FS225R12KE4
Infineon Technologies
Infineon Technologies
IGBT MODULE
$425.18
Available to order
Reference Price (USD)
1+
$425.18000
500+
$420.9282
1000+
$416.6764
1500+
$412.4246
2000+
$408.1728
2500+
$403.921
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, the FS225R12KE4 IGBT module by Infineon Technologies sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The FS225R12KE4 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Infineon Technologies continues to lead the IGBT module revolution with innovations like the FS225R12KE4.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 320 A
- Power - Max: 1100 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
- Current - Collector Cutoff (Max): 3 mA
- Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
FS800R07A2E3IBPSA1
Microchip Technology
APTGT100H170G
Infineon Technologies
FP75R17N3E4PB21BPSA1
Microchip Technology
APTGT300DH60G
onsemi
NXH40T120L3Q1PTG
Microchip Technology
APTGLQ300SK120G
Microchip Technology
MSCGLQ50H120CTBL2NG
IXYS
MID550-12A4
Infineon Technologies
IFT150B12N3E4BOSA1
Infineon Technologies