FS25R12W1T7B11BOMA1
Infineon Technologies
Infineon Technologies
IGBT MODULE LOW POWER EASY
$42.84
Available to order
Reference Price (USD)
1+
$42.84000
500+
$42.4116
1000+
$41.9832
1500+
$41.5548
2000+
$41.1264
2500+
$40.698
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the power of Infineon Technologies's FS25R12W1T7B11BOMA1, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The FS25R12W1T7B11BOMA1 performs exceptionally well in high-voltage DC transmission and pulsed power applications. With Infineon Technologies's FS25R12W1T7B11BOMA1, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Infineon Technologies
FF225R12MS4BOSA1
Infineon Technologies
FZ400R17KE4HOSA1
Microchip Technology
APTGT50A120T1G
Infineon Technologies
FS100R12W3T7B11BPSA1
Infineon Technologies
FS20R06W1E3B11BOMA1
Infineon Technologies
FS3L50R07W2H3FB11BPSA1
Infineon Technologies
FZ1200R45KL3B5NOSA1
Infineon Technologies
FP25R12U1T4BPSA1
Fairchild Semiconductor
FMG1G50US60L
Infineon Technologies