FS650R08A4P2BPSA1
Infineon Technologies
Infineon Technologies
HYBRID PACK 1
$623.38
Available to order
Reference Price (USD)
1+
$623.38000
500+
$617.1462
1000+
$610.9124
1500+
$604.6786
2000+
$598.4448
2500+
$592.211
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the power of Infineon Technologies's FS650R08A4P2BPSA1, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The FS650R08A4P2BPSA1 performs exceptionally well in high-voltage DC transmission and pulsed power applications. With Infineon Technologies's FS650R08A4P2BPSA1, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 750 V
- Current - Collector (Ic) (Max): 375 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 375A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 65 nF @ 50 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-HYBDC6I-1
Related Products
Infineon Technologies
FF150R12KS4HOSA1
Infineon Technologies
F3L400R07ME4B22BOSA1
Infineon Technologies
FS50R12KT4B11BOSA1
Infineon Technologies
FF150R12KT3GHOSA1
Infineon Technologies
FS75R12KE3B9BOSA1
Microchip Technology
APT40GLQ120JCU2
Infineon Technologies
FF100R12RT4HOSA1
IXYS
IXDN75N120
Microchip Technology
APTGT100H60T3G
Infineon Technologies