IXDN75N120
IXYS
IXYS
IGBT MOD 1200V 150A 660W SOT227B
$35.89
Available to order
Reference Price (USD)
1+
$35.98000
10+
$33.28200
30+
$30.58300
100+
$28.42420
250+
$26.08552
Exquisite packaging
Discount
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IXYS's IXDN75N120 represents the cutting edge in Transistors - IGBTs - Modules technology. This discrete semiconductor product delivers superior power control with its optimized gate-drive characteristics and short-circuit ruggedness. The module's innovative design features include an advanced NPT trench construction and low inductance package. Primary applications include traction systems, induction heating, and high-frequency power supplies. A typical use case would be implementing the IXDN75N120 in industrial servo drives or medium-voltage frequency converters. Trust IXYS's expertise in IGBT modules for energy-efficient power management solutions.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 150 A
- Power - Max: 660 W
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 75A
- Current - Collector Cutoff (Max): 4 mA
- Input Capacitance (Cies) @ Vce: 5.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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