FZ1800R17HP4B9HOSA2
Infineon Technologies
Infineon Technologies
IGBT MODULE 1700V 1800A
$983.56
Available to order
Reference Price (USD)
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$906.26000
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The FZ1800R17HP4B9HOSA2 from Infineon Technologies is a high-performance IGBT module designed for power electronics applications. As part of the Discrete Semiconductor Products category, this transistor module offers exceptional efficiency and reliability. Key features include low saturation voltage, high-speed switching, and robust thermal performance. These IGBT modules are widely used in industrial motor drives, renewable energy systems, and electric vehicle powertrains. For example, the FZ1800R17HP4B9HOSA2 is ideal for solar inverters, welding equipment, and UPS systems where high power handling is required. Choose Infineon Technologies's advanced IGBT technology for your most demanding power conversion challenges.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Configuration: Single Switch
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 1800 A
- Power - Max: 11500 W
- Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1800A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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