DF1000R17IE4BOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 1700V 6250W
$541.41
Available to order
Reference Price (USD)
2+
$550.89000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-generation power control with Infineon Technologies's DF1000R17IE4BOSA1 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The DF1000R17IE4BOSA1 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the DF1000R17IE4BOSA1 in your next-generation HVDC systems or particle accelerator power supplies. Infineon Technologies delivers reliability where it matters most with the DF1000R17IE4BOSA1 IGBT module.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): -
- Power - Max: 6250 W
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
FF600R07ME4BPSA1
Infineon Technologies
FS150R12PT4BOSA1
Microchip Technology
APTGT200A120G
Infineon Technologies
FP150R12KT4B11BPSA1
Infineon Technologies
FD900R12IP4DVBOSA1
Vishay General Semiconductor - Diodes Division
VS-GT180DA120U
Infineon Technologies
FF1400R12IP4BOSA1
Microchip Technology
APTGT300DU60G
Infineon Technologies
FF1500R12IE5BPSA1
Fairchild Semiconductor