FF1400R12IP4BOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 1200V 1400A
$1,063.85
Available to order
Reference Price (USD)
2+
$699.90500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the power of Infineon Technologies's FF1400R12IP4BOSA1, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The FF1400R12IP4BOSA1 performs exceptionally well in high-voltage DC transmission and pulsed power applications. With Infineon Technologies's FF1400R12IP4BOSA1, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 1400 A
- Power - Max: 765000 W
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1400A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 82 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Microchip Technology
APTGT300DU60G
Infineon Technologies
FF1500R12IE5BPSA1
Fairchild Semiconductor
FMG1G75US60L
Infineon Technologies
FS50R06W1E3BOMA1
Microchip Technology
APTGT150SK120G
Infineon Technologies
FF75R12RT4HOSA1
Infineon Technologies
FS50R07W1E3B11ABOMA1
Microchip Technology
APTGT75SK120TG
Infineon Technologies
DF650R17IE4BOSA1
Infineon Technologies