FS50R07W1E3B11ABOMA1
Infineon Technologies
Infineon Technologies
IGBT MODULES
$50.42
Available to order
Reference Price (USD)
24+
$40.90250
Exquisite packaging
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The FS50R07W1E3B11ABOMA1 from Infineon Technologies is a high-performance IGBT module designed for power electronics applications. As part of the Discrete Semiconductor Products category, this transistor module offers exceptional efficiency and reliability. Key features include low saturation voltage, high-speed switching, and robust thermal performance. These IGBT modules are widely used in industrial motor drives, renewable energy systems, and electric vehicle powertrains. For example, the FS50R07W1E3B11ABOMA1 is ideal for solar inverters, welding equipment, and UPS systems where high power handling is required. Choose Infineon Technologies's advanced IGBT technology for your most demanding power conversion challenges.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 70 A
- Power - Max: 205 W
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
- Current - Collector Cutoff (Max): 50 µA
- Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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