DF650R17IE4BOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1700V 930A 4150W
$386.29
Available to order
Reference Price (USD)
3+
$385.33667
Exquisite packaging
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Engineered for excellence, the DF650R17IE4BOSA1 IGBT module by Infineon Technologies sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The DF650R17IE4BOSA1 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Infineon Technologies continues to lead the IGBT module revolution with innovations like the DF650R17IE4BOSA1.
Specifications
- Product Status: Not For New Designs
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 930 A
- Power - Max: 4150 W
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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