DF300R12KE3HOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 480A 1470W
$185.44
Available to order
Reference Price (USD)
10+
$112.57700
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DF300R12KE3HOSA1 from Infineon Technologies exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the DF300R12KE3HOSA1 in megawatt-level wind turbine converters. With Infineon Technologies's proven track record, the DF300R12KE3HOSA1 represents the future of power semiconductor modules.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 480 A
- Power - Max: 1470 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Microchip Technology
APT45GP120J
Infineon Technologies
FD250R65KE3KNOSA1
Infineon Technologies
F423MR12W1M1B11BOMA1
Fairchild Semiconductor
FMG1G150US60L
Infineon Technologies
FP50R07N2E4B11BOSA1
Infineon Technologies
FS200R12KT4RB11BOSA1
Infineon Technologies
FF1500R17IP5PBPSA1
Infineon Technologies
FS75R12KE3BOSA1
Infineon Technologies
FF400R12KE3B2HOSA1
Infineon Technologies