FZ1000R33HE3B60BPSA1
Infineon Technologies
Infineon Technologies
IHV IHM T XHP 3 3-6 5K AG-IHVB13
$2,243.28
Available to order
Reference Price (USD)
1+
$2243.28000
500+
$2220.8472
1000+
$2198.4144
1500+
$2175.9816
2000+
$2153.5488
2500+
$2131.116
Exquisite packaging
Discount
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Infineon Technologies's FZ1000R33HE3B60BPSA1 sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the FZ1000R33HE3B60BPSA1 in your traction inverters or high-energy physics experiments for unparalleled performance. Trust Infineon Technologies to deliver cutting-edge IGBT solutions with the FZ1000R33HE3B60BPSA1 power module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Single Switch
- Voltage - Collector Emitter Breakdown (Max): 3300 V
- Current - Collector (Ic) (Max): 1000 A
- Power - Max: 1.6 MW
- Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1kA
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-IHVB130-3
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