FZ1500R33HE3S6BOSA1
Infineon Technologies
Infineon Technologies
IHV IHM T XHP 3 3-6 5K AG-IHVB19
$2,742.48
Available to order
Reference Price (USD)
1+
$2742.48000
500+
$2715.0552
1000+
$2687.6304
1500+
$2660.2056
2000+
$2632.7808
2500+
$2605.356
Exquisite packaging
Discount
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Experience next-generation power control with Infineon Technologies's FZ1500R33HE3S6BOSA1 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The FZ1500R33HE3S6BOSA1 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the FZ1500R33HE3S6BOSA1 in your next-generation HVDC systems or particle accelerator power supplies. Infineon Technologies delivers reliability where it matters most with the FZ1500R33HE3S6BOSA1 IGBT module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Single Switch
- Voltage - Collector Emitter Breakdown (Max): 3300 V
- Current - Collector (Ic) (Max): 1500 A
- Power - Max: 2.4 MW
- Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-IHVB190
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