FD1200R17KE3KNOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1700V 1600A 5950W
$1,519.40
Available to order
Reference Price (USD)
2+
$933.27500
Exquisite packaging
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Experience next-generation power control with Infineon Technologies's FD1200R17KE3KNOSA1 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The FD1200R17KE3KNOSA1 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the FD1200R17KE3KNOSA1 in your next-generation HVDC systems or particle accelerator power supplies. Infineon Technologies delivers reliability where it matters most with the FD1200R17KE3KNOSA1 IGBT module.
Specifications
- Product Status: Not For New Designs
- IGBT Type: -
- Configuration: Dual Brake Chopper
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 1600 A
- Power - Max: 5950 W
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1200A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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