F475R12KS4B11BPSA1
Infineon Technologies
Infineon Technologies
LOW POWER ECONO AG-ECONO2B-211
$194.88
Available to order
Reference Price (USD)
1+
$194.88000
500+
$192.9312
1000+
$190.9824
1500+
$189.0336
2000+
$187.0848
2500+
$185.136
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's F475R12KS4B11BPSA1 represents the cutting edge in Transistors - IGBTs - Modules technology. This discrete semiconductor product delivers superior power control with its optimized gate-drive characteristics and short-circuit ruggedness. The module's innovative design features include an advanced NPT trench construction and low inductance package. Primary applications include traction systems, induction heating, and high-frequency power supplies. A typical use case would be implementing the F475R12KS4B11BPSA1 in industrial servo drives or medium-voltage frequency converters. Trust Infineon Technologies's expertise in IGBT modules for energy-efficient power management solutions.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Full Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 100 A
- Power - Max: 500 W
- Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 75A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONO2C
Related Products
Infineon Technologies
BSM150GB170DN2HOSA1
Infineon Technologies
F4100R17ME4B11BPSA1
Infineon Technologies
FF450R07ME4B11BOSA1
Infineon Technologies
BSM100GB120DN2B2HOSA1
Infineon Technologies
F4100R17ME4B11BPSA2
Vishay General Semiconductor - Diodes Division
VS-GT50YF120NT
Microchip Technology
APTGLQ300A120G
Infineon Technologies
BSM300GA170DLS
Microchip Technology
APTGT200A120D3G
Infineon Technologies