FP50R07N2E4BPSA1
Infineon Technologies
Infineon Technologies
LOW POWER ECONO AG-ECONO2B-411
$112.04
Available to order
Reference Price (USD)
1+
$112.04000
500+
$110.9196
1000+
$109.7992
1500+
$108.6788
2000+
$107.5584
2500+
$106.438
Exquisite packaging
Discount
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The FP50R07N2E4BPSA1 from Infineon Technologies exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the FP50R07N2E4BPSA1 in megawatt-level wind turbine converters. With Infineon Technologies's proven track record, the FP50R07N2E4BPSA1 represents the future of power semiconductor modules.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 70 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONO2B
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