FZ2000R33HE4BOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD IHV IHM T XHP 3 3-6 5K
$4,113.64
Available to order
Reference Price (USD)
1+
$4113.64000
500+
$4072.5036
1000+
$4031.3672
1500+
$3990.2308
2000+
$3949.0944
2500+
$3907.958
Exquisite packaging
Discount
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Engineered for excellence, the FZ2000R33HE4BOSA1 IGBT module by Infineon Technologies sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The FZ2000R33HE4BOSA1 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Infineon Technologies continues to lead the IGBT module revolution with innovations like the FZ2000R33HE4BOSA1.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Single Switch
- Voltage - Collector Emitter Breakdown (Max): 3300 V
- Current - Collector (Ic) (Max): 2000 A
- Power - Max: 4.2 mW
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 2kA (Typ)
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-IHVB190-3
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