FF150R12RT4HOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 150A 790W
$87.96
Available to order
Reference Price (USD)
1+
$62.51000
10+
$58.72000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FF150R12RT4HOSA1 from Infineon Technologies exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the FF150R12RT4HOSA1 in megawatt-level wind turbine converters. With Infineon Technologies's proven track record, the FF150R12RT4HOSA1 represents the future of power semiconductor modules.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 150 A
- Power - Max: 790 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Microchip Technology
APTGT100A60T1G
Infineon Technologies
2ED300C17STROHSBPSA1
Infineon Technologies
DF160R12W2H3FB11BPSA1
Infineon Technologies
FS225R12OE4BOSA1
Infineon Technologies
FF300R08W2P2B11ABOMA1
IXYS
IXXN110N65B4H1
Infineon Technologies
FS300R17KE3BOSA1
Microchip Technology
APTGLQ200H120G
Microchip Technology
APTGT150DA120G
Infineon Technologies