FF200R12KT3EHOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 1200V 1050W
$111.38
Available to order
Reference Price (USD)
10+
$105.76200
Exquisite packaging
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The FF200R12KT3EHOSA1 from Infineon Technologies exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the FF200R12KT3EHOSA1 in megawatt-level wind turbine converters. With Infineon Technologies's proven track record, the FF200R12KT3EHOSA1 represents the future of power semiconductor modules.
Specifications
- Product Status: Not For New Designs
- IGBT Type: -
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Power - Max: 1050 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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