FZ1800R12HE4B9HOSA2
Infineon Technologies
Infineon Technologies
IGBT MODULE 1200V 2735A
$1,390.10
Available to order
Reference Price (USD)
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$853.85000
Exquisite packaging
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Optimize your power systems with Infineon Technologies's FZ1800R12HE4B9HOSA2, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The FZ1800R12HE4B9HOSA2 is particularly effective in high-ambient-temperature environments like steel mill drives. Infineon Technologies brings decades of semiconductor expertise to every FZ1800R12HE4B9HOSA2 module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Single Switch
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 2735 A
- Power - Max: 11000 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 1800A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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