VS-ETF075Y60U
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 600V 109A EMIPAK-2B
$102.18
Available to order
Reference Price (USD)
60+
$88.55200
Exquisite packaging
Discount
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Discover the power of Vishay General Semiconductor - Diodes Division's VS-ETF075Y60U, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The VS-ETF075Y60U performs exceptionally well in high-voltage DC transmission and pulsed power applications. With Vishay General Semiconductor - Diodes Division's VS-ETF075Y60U, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Configuration: Three Level Inverter
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 100 A
- Power - Max: 294 W
- Vce(on) (Max) @ Vge, Ic: 1.93V @ 15V, 75A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: 4.44 nF @ 30 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: EMIPAK-2B
- Supplier Device Package: EMIPAK-2B
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