FZ2400R12HP4B9HOSA2
Infineon Technologies
Infineon Technologies
IGBT MODULE 1200V 3550A
$1,032.29
Available to order
Reference Price (USD)
1+
$951.14000
Exquisite packaging
Discount
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Engineered for excellence, the FZ2400R12HP4B9HOSA2 IGBT module by Infineon Technologies sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The FZ2400R12HP4B9HOSA2 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Infineon Technologies continues to lead the IGBT module revolution with innovations like the FZ2400R12HP4B9HOSA2.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Configuration: Single Switch
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 3550 A
- Power - Max: 13500 W
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 2400A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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