FF900R12IP4DVBOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 900A 5100W
$611.81
Available to order
Reference Price (USD)
3+
$622.51667
Exquisite packaging
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Experience next-generation power control with Infineon Technologies's FF900R12IP4DVBOSA1 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The FF900R12IP4DVBOSA1 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the FF900R12IP4DVBOSA1 in your next-generation HVDC systems or particle accelerator power supplies. Infineon Technologies delivers reliability where it matters most with the FF900R12IP4DVBOSA1 IGBT module.
Specifications
- Product Status: Not For New Designs
- IGBT Type: Trench Field Stop
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 900 A
- Power - Max: 5100 W
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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