IXXN110N65B4H1
IXYS
IXYS
IGBT MOD 650V 215A 750W SOT227B
$30.99
Available to order
Reference Price (USD)
1+
$23.90000
10+
$22.10600
30+
$20.31333
100+
$18.87940
250+
$17.32604
500+
$16.48962
Exquisite packaging
Discount
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Discover the power of IXYS's IXXN110N65B4H1, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The IXXN110N65B4H1 performs exceptionally well in high-voltage DC transmission and pulsed power applications. With IXYS's IXXN110N65B4H1, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Active
- IGBT Type: PT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 215 A
- Power - Max: 750 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
- Current - Collector Cutoff (Max): 50 µA
- Input Capacitance (Cies) @ Vce: 3.65 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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Vishay General Semiconductor - Diodes Division