FZ2400R12KE3B9NOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE
$1,155.88
Available to order
Reference Price (USD)
1+
$1155.88000
500+
$1144.3212
1000+
$1132.7624
1500+
$1121.2036
2000+
$1109.6448
2500+
$1098.086
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, the FZ2400R12KE3B9NOSA1 IGBT module by Infineon Technologies sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The FZ2400R12KE3B9NOSA1 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Infineon Technologies continues to lead the IGBT module revolution with innovations like the FZ2400R12KE3B9NOSA1.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Infineon Technologies
BSM600GA120DLCS
Infineon Technologies
FS100R12N2T4PBPSA1
Microchip Technology
MSCGLQ75DDU120CTBL3NG
Infineon Technologies
FD400R33KF2CNOSA1
Infineon Technologies
BSM100GB120DN2FE325HOSA1
Microchip Technology
APTGT20H60T1G
onsemi
NXH300B100H4Q2F2S1G
Microchip Technology
APTGT35H120T3G
Microchip Technology
APTGLQ75H65T1G
IXYS