NXH300B100H4Q2F2S1G
onsemi
onsemi
PIM 1500V 250KW Q2BOOST
$131.41
Available to order
Reference Price (USD)
1+
$131.40806
500+
$130.0939794
1000+
$128.7798988
1500+
$127.4658182
2000+
$126.1517376
2500+
$124.837657
Exquisite packaging
Discount
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onsemi's NXH300B100H4Q2F2S1G sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the NXH300B100H4Q2F2S1G in your traction inverters or high-energy physics experiments for unparalleled performance. Trust onsemi to deliver cutting-edge IGBT solutions with the NXH300B100H4Q2F2S1G power module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Dual, Common Source
- Voltage - Collector Emitter Breakdown (Max): 1118 V
- Current - Collector (Ic) (Max): 73 A
- Power - Max: 194 W
- Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 100A
- Current - Collector Cutoff (Max): 800 µA
- Input Capacitance (Cies) @ Vce: 6.323 nF @ 20 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 53-PIM/Q2PACK (93x47)
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