APTGT100A120T3AG
Microchip Technology
Microchip Technology
IGBT MODULE 1200V 140A 595W SP3
$122.29
Available to order
Reference Price (USD)
100+
$71.01160
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Microchip Technology's APTGT100A120T3AG stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the APTGT100A120T3AG enables higher power density in MRI gradient amplifiers. Choose Microchip Technology for IGBT modules that push performance boundaries.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 140 A
- Power - Max: 595 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 7.2 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: SP3
- Supplier Device Package: SP3
Related Products
IXYS
IXA27IF1200HJ
Infineon Technologies
FS100R07N2E4B11BPSA1
onsemi
NXH300B100H4Q2F2SG
Infineon Technologies
FF750R12ME7B11BPSA1
Infineon Technologies
FS50R06KE3BPSA1
Infineon Technologies
FS50R12W1T7PB11BPSA1
Infineon Technologies
FP30R06W1E3B11BOMA1
IXYS
MTC120WX55GD-SMD
Infineon Technologies
FS950R08A6P2LBBPSA1
Microchip Technology