IXA27IF1200HJ
IXYS
IXYS
IGBT MOD 1200V 43A ISOPLUS247
$11.75
Available to order
Reference Price (USD)
30+
$7.50300
Exquisite packaging
Discount
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Experience next-generation power control with IXYS's IXA27IF1200HJ IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The IXA27IF1200HJ offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the IXA27IF1200HJ in your next-generation HVDC systems or particle accelerator power supplies. IXYS delivers reliability where it matters most with the IXA27IF1200HJ IGBT module.
Specifications
- Product Status: Active
- IGBT Type: PT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 43 A
- Power - Max: 150 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: ISOPLUS247™
- Supplier Device Package: ISOPLUS247™
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