NXH300B100H4Q2F2SG
onsemi
onsemi
MASS MARKET 250KW 1500V Q2 3 LEV
$148.75
Available to order
Reference Price (USD)
1+
$148.75000
500+
$147.2625
1000+
$145.775
1500+
$144.2875
2000+
$142.8
2500+
$141.3125
Exquisite packaging
Discount
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Optimize your power systems with onsemi's NXH300B100H4Q2F2SG, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The NXH300B100H4Q2F2SG is particularly effective in high-ambient-temperature environments like steel mill drives. onsemi brings decades of semiconductor expertise to every NXH300B100H4Q2F2SG module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Dual, Common Source
- Voltage - Collector Emitter Breakdown (Max): 1118 V
- Current - Collector (Ic) (Max): 73 A
- Power - Max: 194 W
- Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 100A
- Current - Collector Cutoff (Max): 800 µA
- Input Capacitance (Cies) @ Vce: 6.323 nF @ 20 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 53-PIM/Q2PACK (93x47)
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