FZ2400R12KE3NOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE
$870.40
Available to order
Reference Price (USD)
1+
$870.40000
500+
$861.696
1000+
$852.992
1500+
$844.288
2000+
$835.584
2500+
$826.88
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the power of Infineon Technologies's FZ2400R12KE3NOSA1, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The FZ2400R12KE3NOSA1 performs exceptionally well in high-voltage DC transmission and pulsed power applications. With Infineon Technologies's FZ2400R12KE3NOSA1, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Microchip Technology
APTGT100DH60TG
Microchip Technology
APTGT300DA170G
IXYS
MIXA60HU1200VA
Infineon Technologies
FS100R12N2T7B15BPSA1
Microchip Technology
APTGT400A120D3G
Infineon Technologies
FF150R12KE3B8BPSA1
Infineon Technologies
FP50R12N2T7BPSA2
IXYS
MIXG70W1200TED
Infineon Technologies
FS50R17KE3B17BPSA1
Microchip Technology