FZ800R17KF6CB2NOSA1
Infineon Technologies
Infineon Technologies
FZ800R17 - INSULATED GATE BIPOLA
$799.97
Available to order
Reference Price (USD)
1+
$799.97000
500+
$791.9703
1000+
$783.9706
1500+
$775.9709
2000+
$767.9712
2500+
$759.9715
Exquisite packaging
Discount
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Optimize your electronic systems with the FZ800R17KF6CB2NOSA1 Bipolar Junction Transistor (BJT) from Infineon Technologies. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the FZ800R17KF6CB2NOSA1 delivers superior performance in diverse environments. Infineon Technologies's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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