FZT953QTA
Diodes Incorporated
Diodes Incorporated
PWR LOW SAT TRANSISTOR SOT223 T&
$0.50
Available to order
Reference Price (USD)
1+
$0.49735
500+
$0.4923765
1000+
$0.487403
1500+
$0.4824295
2000+
$0.477456
2500+
$0.4724825
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FZT953QTA Bipolar Junction Transistor (BJT) from Diodes Incorporated is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the FZT953QTA is a reliable component for demanding applications. Diodes Incorporated's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 420mV @ 400mA, 4A
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
- Power - Max: 1.6 W
- Frequency - Transition: 125MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223-3
Related Products
onsemi
MJE243G
Rohm Semiconductor
UMT4403U3T106
Rohm Semiconductor
2SAR542F3TR
onsemi
KSC5027OTU
Diodes Incorporated
DXT751-13
Nexperia USA Inc.
PMBT3904,215
Diodes Incorporated
FZT593TA
onsemi
NSVBC857BTT1G
Nexperia USA Inc.
PMV130ENEA,215
onsemi