G12P04K
Goford Semiconductor
Goford Semiconductor
P40V,RD(MAX)<35M@-10V,RD(MAX)<45
$0.58
Available to order
Reference Price (USD)
1+
$0.58000
500+
$0.5742
1000+
$0.5684
1500+
$0.5626
2000+
$0.5568
2500+
$0.551
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the G12P04K by Goford Semiconductor, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The G12P04K stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Goford Semiconductor.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
onsemi
FQA55N25
Diodes Incorporated
DMG1013T-7
Infineon Technologies
IPDD60R045CFD7XTMA1
Panjit International Inc.
PJF60R980E_T0_00001
Renesas Electronics America Inc
RJK0355DSP-00#J0
Torex Semiconductor Ltd
XP233P1501TR-G
IXYS
IXFN90N85X
onsemi
FDMS0306AS
Fairchild Semiconductor
NDB6030L
Taiwan Semiconductor Corporation