G3R30MT12J
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 96A TO263-7
$24.20
Available to order
Reference Price (USD)
1+
$24.20000
500+
$23.958
1000+
$23.716
1500+
$23.474
2000+
$23.232
2500+
$22.99
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The G3R30MT12J by GeneSiC Semiconductor is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the G3R30MT12J is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 15V
- Vgs(th) (Max) @ Id: 2.69V @ 12mA
- Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 3901 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 459W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Related Products
Nexperia USA Inc.
PSMN2R4-30YLDX
onsemi
NTD4810NT4G
onsemi
FDMS86581
Infineon Technologies
BSC0504NSIATMA1
Infineon Technologies
BSZ0902NSATMA1
Sanken
2SK2420
Renesas Electronics America Inc
RJK0348DSP-00#J0
Toshiba Semiconductor and Storage
TK1K0A60F,S4X
Texas Instruments
CSD15380F3
Diodes Incorporated