G3R450MT17D
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 9A TO247-3
$7.64
Available to order
Reference Price (USD)
1+
$7.64000
500+
$7.5636
1000+
$7.4872
1500+
$7.4108
2000+
$7.3344
2500+
$7.258
Exquisite packaging
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Optimize your power electronics with the G3R450MT17D single MOSFET from GeneSiC Semiconductor. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the G3R450MT17D combines cutting-edge technology with GeneSiC Semiconductor's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 585mOhm @ 4A, 15V
- Vgs(th) (Max) @ Id: 2.7V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 88W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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