G3R45MT17K
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 61A TO247-4
$35.06
Available to order
Reference Price (USD)
1+
$35.06000
500+
$34.7094
1000+
$34.3588
1500+
$34.0082
2000+
$33.6576
2500+
$33.307
Exquisite packaging
Discount
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Optimize your power electronics with the G3R45MT17K single MOSFET from GeneSiC Semiconductor. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the G3R45MT17K combines cutting-edge technology with GeneSiC Semiconductor's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 58mOhm @ 40A, 15V
- Vgs(th) (Max) @ Id: 2.7V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 15 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 4523 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 438W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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