G3S12010P
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 2-P
$14.88
Available to order
Reference Price (USD)
1+
$14.88000
500+
$14.7312
1000+
$14.5824
1500+
$14.4336
2000+
$14.2848
2500+
$14.136
Exquisite packaging
Discount
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The G3S12010P by Global Power Technology-GPT is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The G3S12010P is also used in smart home devices and wearable technology, ensuring seamless operation. Global Power Technology-GPT's expertise in semiconductor technology guarantees that the G3S12010P delivers top-notch performance in any application.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 37A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 110 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Capacitance @ Vr, F: 765pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AC
- Operating Temperature - Junction: -55°C ~ 175°C
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