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G4S12020BM

Global Power Technology-GPT
G4S12020BM Preview
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 3-P
$32.59
Available to order
Reference Price (USD)
1+
$32.59000
500+
$32.2641
1000+
$31.9382
1500+
$31.6123
2000+
$31.2864
2500+
$30.9605
Exquisite packaging
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Specifications

  • Product Status: Active
  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io) (per Diode): 33.2A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AB

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