G4S6508Z
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 8A DFN5*
$5.16
Available to order
Reference Price (USD)
1+
$5.16000
500+
$5.1084
1000+
$5.0568
1500+
$5.0052
2000+
$4.9536
2500+
$4.902
Exquisite packaging
Discount
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The G4S6508Z single rectifier diode by Global Power Technology-GPT is a standout in the Diodes - Rectifiers - Single classification. Known for its robust construction and high rectification efficiency, it is perfect for demanding applications like electric vehicle charging stations and industrial robotics. Its low power dissipation and high thermal stability ensure optimal performance in data storage systems and server farms. The G4S6508Z is also used in consumer gadgets, such as smartphones and tablets, highlighting its adaptability. Global Power Technology-GPT's G4S6508Z is the ultimate solution for high-performance rectification needs.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 30.5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Capacitance @ Vr, F: 395pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-DFN (4.9x5.75)
- Operating Temperature - Junction: -55°C ~ 175°C
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