G5S6504Z
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 4A DFN5*
$3.41
Available to order
Reference Price (USD)
1+
$3.41000
500+
$3.3759
1000+
$3.3418
1500+
$3.3077
2000+
$3.2736
2500+
$3.2395
Exquisite packaging
Discount
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Upgrade your electronic systems with the G5S6504Z single rectifier diode by Global Power Technology-GPT. As a vital component in the Discrete Semiconductor Products range, this diode offers superior rectification with minimal power loss. Its high-temperature tolerance and fast switching make it ideal for use in electric vehicles, industrial automation, and renewable energy systems. The G5S6504Z is also a preferred choice for consumer electronics, including TVs and audio equipment, where efficiency and reliability are paramount. Choose Global Power Technology-GPT's G5S6504Z for advanced semiconductor solutions.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 15.45A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 4 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Capacitance @ Vr, F: 181pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-DFN (4.9x5.75)
- Operating Temperature - Junction: -55°C ~ 175°C
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