GC11N65F
Goford Semiconductor
Goford Semiconductor
N650V,RD(MAX)<360M@10V,VTH2.5V~4
$1.95
Available to order
Reference Price (USD)
1+
$1.95000
500+
$1.9305
1000+
$1.911
1500+
$1.8915
2000+
$1.872
2500+
$1.8525
Exquisite packaging
Discount
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Upgrade your designs with the GC11N65F by Goford Semiconductor, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the GC11N65F is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 11A
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 31.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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