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RJK03M9DNS-00#J5

Renesas Electronics America Inc
RJK03M9DNS-00#J5 Preview
Renesas Electronics America Inc
MOSFET N-CH 30V 14A 8HWSON
$0.38
Available to order
Reference Price (USD)
1+
$0.38000
500+
$0.3762
1000+
$0.3724
1500+
$0.3686
2000+
$0.3648
2500+
$0.361
Exquisite packaging
Discount
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: 11.1mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
  • Vgs (Max): -
  • Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 10W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HWSON (3.3x3.3)
  • Package / Case: 8-PowerWDFN

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