TK3R2E06PL,S1X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
X35 PB-F POWER MOSFET TRANSISTOR
$1.67
Available to order
Reference Price (USD)
1+
$1.67000
500+
$1.6533
1000+
$1.6366
1500+
$1.6199
2000+
$1.6032
2500+
$1.5865
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The TK3R2E06PL,S1X from Toshiba Semiconductor and Storage redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the TK3R2E06PL,S1X offers the precision and reliability you need. Trust Toshiba Semiconductor and Storage to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 168W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
Related Products
Fairchild Semiconductor
FDZ293P
Infineon Technologies
IRF1404LPBF
Microchip Technology
APT9M100B
Nexperia USA Inc.
PSMN1R8-30MLHX
Infineon Technologies
IPA60R600P7XKSA1
Infineon Technologies
IAUC100N04S6L014ATMA1
NXP USA Inc.
BUK7108-40AIE,118
Infineon Technologies
IPP110N20NAAKSA1
Infineon Technologies
IPA60R125CPXKSA1
onsemi