GE10020
Harris Corporation
Harris Corporation
TRANS NPN DARL 300V 60A TO204AE
$4.40
Available to order
Reference Price (USD)
1+
$4.40000
500+
$4.356
1000+
$4.312
1500+
$4.268
2000+
$4.224
2500+
$4.18
Exquisite packaging
Discount
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Discover the GE10020 Bipolar Junction Transistor (BJT) from Harris Corporation, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the GE10020 is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose Harris Corporation for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 60 A
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: 2.4V @ 1.2A, 30A
- Current - Collector Cutoff (Max): 250µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 15A, 5V
- Power - Max: 250 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AE
- Supplier Device Package: TO-204AE
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